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update 220501

　

Application and development of InP high-speed p-i-n optical detector for long-distance optical fiber communication in 40 Gbit/sec 1550 nm optical band

  1. Device Model Extraction of Near-Ballistic Transport UTC Photodiode (NBUTC)文件下載

we have analyzed the dynamic behaviors of NBUTC-PD under different output photocurrent and bias voltage by use of light-wave-component (LCA) analyzer.  By utilizing the extracted scattering parameters and equivalent-circuit-model fitting, the unique bandwidth enhancement can be attributed to the ac capacitance reduction and near-ballistic transport of electron under high output photocurrent.

　

  1. Evanescently coupled photodiode (ECPD)

•By incorporating the evanescent-coupling optical waveguide structure and partially p-doped photo-absorption layer, state of the art performance of photodiode has been achieved ：

–Bandwidth: >50GHz

–Responsivity: 1.01A/W

–RF power & Saturation Current: 6.5 dBm at 40GHz & 23mA 

　

  1. A Bias-Dependent Equivalent-Circuit Model of Evanescently Coupled Photodiode (ECPD)

lBy concerning the relationship between  the influence of bias voltage and photocurrent in the equivalent circuit-model of high power PD, such model is more convenient for systems and circuits integration especially under high RF power applications.

　

Related papers：

1.  Y.-S. Wu, J.-W. Shi, J.-Y. Wu, F.-H. Huang, Y.-J. Chan, Y.-L. Huang, and R. Xuan, “Design and Demonstration of High Power and High-Speed Evanescently Coupled Photodiodes with Partially p-Doped Photo-absorption Layer” Conference on Laser and Electro-Optics (CLEO/QELS’2005), USA, OSA Technical Digest, CMGG1, 2005.

2. Y.-S. Wu, J.-W. Shi, J.-Y. Wu, F.-H. Huang, Y.-J. Chan, Y.-L. Huang, and R. Xuan  “High Performance Evanescently Edge Coupled Photodiodes with Partially p-Doped Photo-absorption Layer at 1.55mm Wavelength” IEEE Photon. Tech. Lett vol. 17, pp.878-880, April, 2005. (B)

3.  J.-W. Shi, Y.-S. Wu, C.-Y. Wu,  P.-H. Chiu, and C.-C. Hong, High-Speed,  High-Responsivity, and High-Power Performance of Near- Ballistic Uni-Traveling-Carrier Photodiode at 1.55μm Wavelength,”IEEE Photon. Technol. Lett., vol.17, pp. 1929-1931, Sep., 2005. (B)

4. W.-Y. Chiu, F.-H. Huang, Y.-S. Wu, D.-M. Lin, Y.-J. Chan, S.-H. Chen, J.-I. Chyi, and J.-W. Shi, “Improvement of Mesa-Sidewall Leakage Current Using Benzocyclobuten Sidewall Process in InGaAs/InP MSM Photodetector,” Japanese Journal of Applied Physics (Brief Communication), vol. 44, No. 4B, pp. 2586-2587. (B)

5. J.-W. Shi, Y.-S. Wu, S.-H. Hsieh, H.-C. Hsu, F.-H. Huang, Y.-J. Chan, Ja-Yu Lu, C.-K. Sun, C.-C. Hong, “High-Power and High-Responsivity Photodiode for Long-Haul and Short-Reach Fiber Communication” SPIE Optic East 2005 (Invited Paper, Optic East, Oct. 2005). (B)

6. J.-W. Shi, Y.-S. Wu, F.-H. Huang, and Y.-J. Chan “High-Responsivity, High-Speed, and High-Saturation-Power Performances of Evanescently Coupled Photodiodes with Partially p-Doped Photo-absorption Layer,” pp.351-354, IEDM Tech. Dig., 2004. (B)

7. Y.-S. Wu, J.-W. Shi, J.-Y. Wu, F.-H. Huang, Y.-J. Chan, Y.-L. Huang, and R. Xuan, “Design and Demonstration of High-Power and High-Speed Evanescently Coupled Photodiodes with Partially p-Doped Photo-absorption Layer” in Technical Digest of Optics and Photonics Taiwan'04, Chung-Li, TAIWAN, (2004) (B)

8. Y.-S. Wu, J.-W. Shi, F.-H. Huang, and Y.-J. Chan “High Performances of Evanescently Coupled Photodiodes with Partially p-Doped Photo-absorption Layer,” Proceedings of Electronics Devices and Materials Symposia, pp.479-482, Taiwain, Dec., 2004 (B)

9. Y.-S. Wu, J.-W. Shi, J.-Y. Wu, F.-H. Huang, Y.-J. Chan, Y.-L. Huang, and R. Xuan, “Design and Demonstration of High-Power and High-Speed Evanescently Coupled Photodiodes with Partially p-Doped Photo-absorption Layer” Conference on Laser and Electro-Optics (CLEO/QELS’2005), USA, OSA Technical Digest, CMGG1, 2005. (B)

10. C.-Y. Wu, Y.-S. Wu, J.-W. Shi, “Near-Ballistic Uni-Traveling Carrier Photodiode at 1.55mm Wavelength” 2005 STFOC International Conference, TAIWAN, 2005. (B)

11. Y.-S. Wu, F.-H. Huang, Y.-J. Chan, J.-W. Shi, “High Performance Photodiode with Partially P-Doped Photo-absorption Layer for 40Gbit/sec Fiber Communication System” 2005 STFOC International Conference, TAIWAN, 2005. (B)

12. Wei-Yu Chiu, Fan-Hsiu Huang, Yen-Shian Wu, Don-Ming Lin, Shu-Han Chen, Jin-Wei Shi, Jen-Inn Chyi and Yi-Jen," Reduced Mesa-Sidewall Leakage Current in InGaAs/InP MSM Photodetector by BCB Sidewall Process" in Proc., International Conference on Solid State Devices and Materials ,Tokyo, pp. 944-945, 2004. (B)

13. Y.-S. Wu, D.-M. Lin, F.-H. Huang, W. Y. Chiu, J.-W. Shi, and Y.-J. Chan, “A Bias-Dependent Equivalent-Circuit Model of High Performance Evanescently Coupled Photodiode with Partially P-Doped Absorption Layer” 2005 International Conference on Solid State Devices and Materials, Kobe, pp. 344-345, (2005) (B)

14. Wei-Yu Chiu, Wen-Kai Wang, Yen-Shian Wum, Fan-Hsiu Huang, Dong-Ming Lin, Yi-Jen Chan and Jin-Wei Shi, “InP/InGaAs Partially p-Doped Photodiode with Leaky Optical Waveguide and Distributed Bragg Reflectors for High-Saturation-Current and High-Bandwidth-Responsivity Product” International Conference on Solid State Devices and Materials, Kobe, pp. 740-741 (2005) (B)

15. T.-J. Hung, J.-W. Shi, S.-H. Chen, Y.-S. Wu, J.-I. Chyi, and Ying-Jay Yang, “InP Based Transverse Junction Superluminescent Diodes with Extremely Wide Optical Bandwidth (>460nm)” 2005 Optics and Photonics Taiwan, Tainan, A1N-56085 (2005) (B).

16. P.-H. Chiu, J.-Y. Wu, Y.-S. Wu, J.-W. Shi, and C.-C. Hong, “High-Speed, High-Responsivity, and High-Power Performance of Near-Ballistic Uni-Traveling-Carrier Photodiode at 1.55mm Wavelength” 2005 Optics and Photonics Taiwan, Tainan, A1N-69083 (B).

17. Y.-S. Wu, J.-W. Shi, P.-H. Chiu, and Y.-J. Chan, “High Performance of Near-Ballistic Uni-Traveling-Carrier Photodiode at 1.55mm Wavelength ,” 2005 Electron Devices and Materials Symposia, Kaohsiung, Taiwan, B-25 (2005) (B)

18. Y.-S. Wu, P.-H. Chiu, J.-W. Shi, and Y.-J. Chan, “Analytical Model for High Performance Near-Ballistic Uni-Traveling-Carrier Photodiode” 2005 Optics and Photonics Taiwan, Tainan, (2005) (B).

19.  W.-Y. Chiu, J.-W. Shi, W.-K. Wang, Y.-S. Wu, Y.-J. Chan, Y.-L. Huang, and R. Xuan, “Photodiode with Partially Depleted Absorber, Leaky Optical Waveguide, and Distributed-Bragg-Reflector (DBR) for High-Power and High-Bandwidth-Responsivity Product Performance” Optical Fiber Communication (OFC 2006), USA, OFI3, (2006)

20.  Y.-S. Wu, J.-W. Shi, and P.-H. Chiu, “Analysis of High-Performance Near-Ballistic Uni-Traveling-Carrier Photodiode at a 1.55�慆 Wavelength” Optical Fiber Communication (OFC 2006), USA, OFI2, (2006) (EI)

21. Y.-S. Wu, J.-W. Shi, and P.-H. Chiu “Analytical Modeling of a High-Performance Near-Ballistic Uni-Traveling-Carrier Photodiode at a 1.55mm Wavelength,” IEEE Photon. Technol. Lett., vol. 18, pp. 938-940, April, 2006.

22. W.-Y. Chiu, J.-W. Shi, W.-K. Wang, Y.-S. Wu, Y.-J. Chan, Y.-L. Huang, and R. Xuan, “Leaky-Wave Photodiodes with a Partially p-Doped Absorption Layer and a Distributed-Bragg-Reflector (DBR) for High-Power and High-Bandwidth-Responsivity Product Performance” IEEE Photon. Technol. Lett., vol. 18, pp. 1323-1325, June, 2006.

23. W.-K. Huang, S.-C. Huang, H.-W. Chung, Y.-M. Hsin, J.-W. Shi, Y.-C. Kao, and J.-M. Kuo, “37-GHz Bandwidth Monolithically Integrated InP HBT/Evanescently Coupled Photodiode” IEEE Photon. Technol. Lett., vol. 18, pp. 1267-1269, June, 2006.

24. W.-Y. Chiu, J.-W. Shi, Y.-S. Wu, F.-H. Huang, Wei Lin, and Y.-J. Chan “The Monolithic Integration of a Wavelength-Demultiplexer with Evanescently-Coupled Uni-Traveling-Carrier Photodiodes” IEEE Photon. Technol. Lett., vol. 19, pp.1433-1435, 2007.

25. Y.-S. Wu, J.-W. Shi, P.-H. Chiu, and Wei Lin “High-Performance Dual-Step Evanescently-Coupled Uni-Traveling-Carrier Photodiodes” IEEE Photon. Technol. Lett., vol. 19, pp. 1682-1684, 2007.

26. Y.-S. Wu, P.-H. Chiu, and J.-W. Shi, “High-Speed and High-Power Performance of a Dual-Step Evanescently-Coupled Uni-Traveling-Carrier Photodiode at a 1.55mm Wavelength” Optical Fiber Communication (OFC 2007), USA, OThG1, (2007)

27.  J.-W. Shi, Y.-S. Wu, and Wei-Yu Chiu, “High-Speed and High-Power 40GHz InP Based Photodiode for Microwave Photonic Applications” 2007 Asia-Pacific Microwave Photonics Conference, Korea, Technical Digest, p.3-6, (2007) (Invited Paper)