Jin-Wei Shi was born in Kaohsiung, Taiwan on January 22, 1976. He received his B.S. degree in Electrical Engineering from National Taiwan University, Taipei, Taiwan in 1998 and his Ph.D. from the Graduate Institute of Electro-Optical Engineering, National Taiwan University, Taipei, Taiwan in 2002. He was a visiting scholar at the University of California, Santa Barbara (UCSB), CA, in 2000 and 2001. In 2002-2003, he served as a post-doc at the Electronic Research & Service Organization (ERSO) of the Industrial Technology Research Institute (ITRI). In 2003, he joined the Department of Electrical Engineering, National Central University, Taoyuan, Taiwan, where he is now a professor. In 2011, he again joined the ECE Dept. of UCSB as a visiting scholar. His current research interests include ultra-high speed/power optoelectronic devices, such as photodetectors, electro-absorption modulators, sub-millimeter wave photonic transmitters, and semiconductor lasers. He has authored or co-authored more than 110 Journal papers, 160 conference papers and hold 20 patents. He was an invited speaker at the 2002 IEEE LEOS, 2005 SPIE Optics East, 2007 Asia-Pacific Microwave Photonic conference (AP-MWP), 2008 Asia Optical Fiber Communication & Optoelectronic Exposition & Conference (AOE), 2011 Optical Fiber Communication (OFC), and 2012 IEEE Photonic Conference (IPC). He served on the technical program committees for the OFC 2009-2011, 2012 SSDM, 2012 MWP, and 2013 Asia-Pacific CLEO. In 2007 he was the recipient of the Excellent Young Researcher Award from the Association of Chinese IEEE and in 2010 he received the Da-You Wu Memorial Award.

In another work published in 2018 (IEEE J. of Sel. Topics in Quantum Electronics, vol. 24, No. 2, pp. 3800208, March/April. , 2018.), he applied the same concept to avalanche photodiodes (APD) to further improve their sensitivity and saturation current performance. Currently, Prof. Shi’s cutting-edge innovative APDs (US9466751B1) have already been adopted for mass production by optoelectronic chip manufactures, such asHisilicon Optoelectronics, for the fabrication of 10 G APDs with an unprecedented high sensitivity (SEN). A further1-2 dBenhancement of the SEN was achieved by the insertion of an additional THE field control layer layer inside the multiplication layer of the APD as compared to that of other state-of-the-art APDs in the market.

Prof. Shi is one of the pioneers and leaders in the field of high-power single-mode (SM) VCSEL research for sensing and high-speed communication. He was the first to demonstrateSM Zn-diffusion VCSELs with a record-high SM power and high-speed performancefor data transmission (IEEE Photon. Technol. Lett., vol. 20, pp.1121-1123, July, 2008. Google citations 69). Furthermore, along with Prof. Ying-Jay Yang he is the co-inventor of the Zn-diffusion VCSEL technology (TW I474569 B and US 8130809 B2), whose state-of-the-art SM high-power performance has opened the door to numerous new innovative and practical real-world applications, such as the laser mouse and improved surveillance devices. For example, it has been applied as a light source in the proximity sensor module in the Apple iPhone.Such reliable Zn-diffusion VCSELs are already in mass production by the Truelight and Unikorn semiconductor companies in Taiwan.