Jin-Wei Shi (M’03–SM’12–F’25) was born in Kaohsiung, Taiwan on January 22, 1976. He received his B.S. degree in Electrical Engineering from National Taiwan University, Taipei, Taiwan in 1998 and his Ph.D. from the Graduate Institute of Electro-Optical Engineering, National Taiwan University, Taipei, Taiwan in 2002. He was a visiting scholar at the University of California, Santa Barbara (UCSB), CA, in 2000 and 2001. In 2002-2003, he served as a post-doc at the Electronic Research & Service Organization (ERSO) of the Industrial Technology Research Institute (ITRI). In 2003, he joined the Department of Electrical Engineering, National Central University, Taoyuan, Taiwan, where he is now a professor. In 2011, he again joined the ECE Dept. of UCSB as a visiting scholar. His current research interests include ultra-high speed/power optoelectronic devices, such as photodetectors, electro-absorption modulators, sub-millimeter wave photonic transmitters, and semiconductor lasers. He has authored or co-authored more than 180 Journal papers, 160 conference papers and hold 20 patents. He was an invited speaker at the 2002 IEEE LEOS, 2005 SPIE Optics East, 2007 Asia-Pacific Microwave Photonic conference (AP-MWP), 2008 Asia Optical Fiber Communication & Optoelectronic Exposition & Conference (AOE), 2011 Optical Fiber Communication (OFC), and 2012 IEEE Photonic Conference (IPC). He served on the technical program committees for the OFC 2009-2011, 2012 SSDM, 2012 MWP, and 2013 Asia-Pacific CLEO. In 2007 he was the recipient of the Excellent Young Researcher Award from the Association of Chinese IEEE and in 2010 he received the Da-You Wu Memorial Award. He has been an Optica fellow since 2023 and fellow of IEEE since 2025. He has also served as associate editor of Optics Express from 2017 to 2023.

On the other hand, in the traditional millimeter-wave (MMW)/THz PD, the output power is usually limited by its low optimum bias voltage (< -1V). He has shown how, by inserting an additional field control layer inside the epi-structure of a high-power PD, the device can sustain an overshoot electron drift-velocity under a high bias, allowing an unprecedented increase in the THz/MMW output power, which allows the realization of an MMW photonic system with enough output power for practical applications.

On the other hand, Prof. Shi is one of the pioneering leaders in the field of single-mode VCSEL research. He is the co-inventor of Zn-diffusion VCSEL and is the first to demonstrate Zn-diffusion VCSELs with a record-high single-mode power and high-speed performance for sensing and data communication. Compared with other reported technologies for single-mode VCSELs, the Zn-diffusion VCSEL technology is the only one which can simultaneously deliver high single-mode power and reduce its resistance. He has transferred his Zn-diffusion VCSEL structure to Unikorn Semiconductor in mass production for light source in the proximity sensor module in the Apple iPhone due to that it can effectively reduce the resistance of ion-implanted VCSEL to meet the requirement of high-reliability.