
許晉瑋(JIN-WEI SHI)
Jin-Wei Shi (M’03–SM’12–F’25) was born in Kaohsiung, Taiwan on January 22, 1976. He received his B.S. degree in Electrical Engineering from
National Taiwan University, Taipei, Taiwan in 1998 and his Ph.D. from the Graduate Institute of Electro-Optical Engineering, National Taiwan
University, Taipei, Taiwan in 2002. He was a visiting scholar at the University of California, Santa Barbara (UCSB), CA, in 2000 and 2001.
In 2002-2003, he served as a post-doc at the Electronic Research & Service Organization (ERSO) of the Industrial Technology Research Institute
(ITRI). In 2003, he joined the Department of Electrical Engineering, National Central University, Taoyuan, Taiwan, where he is now a professor.
In 2011, he again joined the ECE Dept. of UCSB as a visiting scholar. His current research interests include ultra-high speed/power optoelectronic
devices, such as photodetectors, electro-absorption modulators, sub-millimeter wave photonic transmitters, and semiconductor lasers. He has
authored or co-authored more than 180 Journal papers, 160 conference papers and hold 20 patents. He was an invited speaker at the 2002 IEEE
LEOS, 2005 SPIE Optics East, 2007 Asia-Pacific Microwave Photonic conference (AP-MWP), 2008 Asia Optical Fiber Communication & Optoelectronic
Exposition & Conference (AOE), 2011 Optical Fiber Communication (OFC), and 2012 IEEE Photonic Conference (IPC). He served on the technical
program committees for the OFC 2009-2011, 2012 SSDM, 2012 MWP, and 2013 Asia-Pacific CLEO. In 2007 he was the recipient of the Excellent
Young Researcher Award from the Association of Chinese IEEE and in 2010 he received the Da-You Wu Memorial Award. He has been an Optica fellow
since 2023 and fellow of IEEE since 2025. He has also served as associate editor of Optics Express from 2017 to 2023.
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Interests
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ultrahigh speed/power photodiodes and avalanche photodiodes, high-speed vertical-cavity
surface-emitting laser and photodiode for optical interconnect, light source and detector for FMCW LiDAR.
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Education
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B.S., Electrical Engineering, National Taiwan University, Taipei, Taiwan.1998.6.
Ph.D., Electro-Optical Engineering, National Taiwan University, Taipei, Taiwan,
2002.6. Thesis: Metal-Semiconductor-Metal Traveling Wave Photodetectors Advisor: Chi-Kuang Sun
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Experience
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NATIONAL TAIWAN UNIVERSITY
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Taipei, TAIWAN
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Graduate Institute of Electro-Optical Engineering
Research Assistant 1998.8 –2002.7
Research topics cover design and modeling of ultra-high speed and high power traveling wave photodetector/photomixer,
measurement of ultra-high speed device (E-O sampling), nonlinearity of low temperature grown GaAs based photodetector,
and optoelectronic generation of sub-millimeter wave.
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UNIVERSITY of CALIFORNIA
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Santa Barbara, CA
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Department of Electrical and Computer Engineering
Visiting Scholar 2000.6- 2000.9 and 2001.2-2001.8
Research includes fabrication of ultrahigh speed and high power traveling wave photodetector/photomixer, photomixer array, membrane THz photomixer.
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INDUS. TECH. RES. INS.
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Hsinchu, TAIWAN
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Electronics Research & Service Organization
Consultant 2002/12~2003/8
Research includes Si/SiGe/SiC based optical communication systems on a single Si chip (SOC), high speed HPT, ultra-high
gain-bandwidth product APD.
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NATIONAL CENTRAL UNIVERSITY
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Taoyuan, TAIWAN
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Department of Electrical Engineering
Assistant Professor2003/8~2006/8
Associate Professor2006/8 to 2012/01
Professor2011/8- now
Research includes high-speed and high-power photodiode, THz photonic transmitter, electro-absorption modulator, Si/SiGe
based avalanche photodiode, High-speed GaN based LED, High-Speed VCSEL, Infrared and visible white-light LED
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UNIVERSITY of CALIFORNIA
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Santa Barbara, CA
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Department of Electrical and Computer Engineering
Visiting Professor2011/02-2012/02 and 2016/02-2017/02
Research includes Si photonic integrated circuit, sub-THz photonic transmitter-mixer,
photonic wireless communication with ultra-high data rate.
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Contributions
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Some of Prof. Shi’s most important contributions are, first of all, his demonstration of a
revolutionary epi-layer structure for avalanche photodiode (APD) and high-power photodiodes (PD). By inserting additional field
control layers inside the multiplication layers of ultra-fast APDs, the burden imposed by the tremendous increase of the dark
current for pursuing high-speed performance can be released with a simultaneous improvement in their sensitivity. This novel
APD structure has since been put into mass production by Source photonic, Hisilicon Optoelectronics, and LandMark Optoelectronics
with a further 2 dB enhancement of the sensitivity achieved as compared to that of other state-of-the-art APD products for 10G
passive optical network (PON) market.
On the other hand, in the traditional millimeter-wave (MMW)/THz PD, the output power
is usually limited by its low optimum bias voltage (< -1V). He has shown how, by inserting an additional field control
layer inside the epi-structure of a high-power PD, the device can sustain an overshoot electron drift-velocity under a
high bias, allowing an unprecedented increase in the THz/MMW output power, which allows the realization of an MMW photonic
system with enough output power for practical applications.
On the other hand, Prof. Shi is one of the pioneering leaders in the field of single-mode VCSEL
research. He is the co-inventor of Zn-diffusion VCSEL and is the first to demonstrate Zn-diffusion VCSELs with a record-high
single-mode power and high-speed performance for sensing and data communication. Compared with other reported technologies for
single-mode VCSELs, the Zn-diffusion VCSEL technology is the only one which can simultaneously deliver high single-mode power and
reduce its resistance. He has transferred his Zn-diffusion VCSEL structure to Unikorn Semiconductor in mass production for light
source in the proximity sensor module in the Apple iPhone due to that it can effectively reduce the resistance of ion-implanted VCSEL
to meet the requirement of high-reliability.
In addition to Zn-diffusion technique discussed above, Prof. Shi was the first to demonstrate
oxide-relief structures which could greatly reduce the parasitic capacitance in VCSELs. In comparison to the other reported
techniques, such as multi-oxide layers, oxide-relief is the only one which can simultaneously improve both speed and reliability
performance. He has transferred this VCSEL structure to the industry, such as Source Photonic, Unikorn Semiconductor, and AboCom
communications for mass production of short-reach data communication VCSEL transmitter.
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Publications
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Authored and co-authored 178 SCI journal papers, 2 book editor, 6 invited book chapters, over 134 international conference papers,
30 U.S.A. patents, 30 Taiwan patents, 6 invited magazine reports, and several invited international conference papers.
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