Pei-Wen Li received the Bachelor degree in Electrophysics from National Chiao-Tung University in 1989, and received the Master and Ph.D. degree in Electrical Engineering from Columbia University in New York in 1991 and 1994, respectively. Her Ph.D. dissertation was focused on the study of low temperature oxidation of SiGe alloys and she has successfully demonstrated the first pure SiGe-channel pMOSFETs “SiGe pMOSFETs with gate oxide fabricated by microwave electron cyclotron resonance plasma”, (IEEE Electron Device Letters, vol. 15, p.402-405). In 1995, she joined the R/D technology division of Vanguard International Semiconductor Corporation working on the process development and integration of 64M DRAM. Then, she joined I-Shou University as a faculty in the department of Electronic Engineering in 1996, where her research was focused on the characterization of InGaAsN material properties and its application on HEMT and HBT related devices. She joined the department of Electrical Engineering, National Central University as an associate professor in 2000, was promoted to be a professor since August 2005, and served as the department chairman during 2007-2010. Currently she is the director of the Center for Nanoscience and Technology, National Central University in charge of the core facility for nano fabrication and nano characterization.

Dr. Li’s main research theme focuses on experimental silicon-germanium nanostructures and devices. Her present research encompasses germanium quantum dot single electron transistors, photodetectors, nonvolatile memory, and energy saving (photovoltaic and thermoelectric) devices, making use of self-assembly nanostructures in silicon integration technology. Her research group has successfully developed a novel CMOS-compatible, self-organized approach for the generation of germanium quantum dots on Si-containing layers through thermal oxidation of silicon-germanium-on-insulator structures. Of particular, the successful demonstration of precise placement and size control of the self-assembled germanium quantum dots shed a light on the practical creation of new nano-electronic, nano-photonic, and electromechanical devices.

She has produced the first Ge quantum-dot single electron transistor with self-aligned nanoelectrodes that produces room-temperature Coulomb blockade characteristics with very large peak-to-valley ratio up to 750 and excellent Coulomb stability (“Fabrication of a germanium quantum-dot single electron transistor with large Coulomb-blockade oscillations at room temperatures,” Applied Physics Letters, vol. 85, p. 1532. (cited time: 38), and “Tunneling spectroscopy of germanium quantum-dot in single-hole transistors with self-aligned electrodes,” Nanotechnology, vol. 18, p. 475402).

She has also successfully demonstrated wavelength-tunable from near ultraviolet (NUV) to near infrared (NIR) Ge quantum-dot photodetectior in 2012 (“CMOS-compatible generation of self-organized 3D Ge quantum dot array for photonic and thermoelectric applications,” IEEE Trans. Nanotechnology, vol. 11, no. 4, p. 657-660.).

Dr. Li has published more than 60 Journal papers and holds 4 patents in Si device processing.

Y. Ho, M. Cheng, P. W. Li, H. Cheng, U. Huang, and S. Wu, “Method of Manufacturing a Crown Shape Capacitor”, USA patent 5,932,115, 1999/08/03~2019/08.

M. J. Cherng and P. W. Li, “Method for Etching Polymer-Assisted Reduced Small Contacts for Ultra Large Scale Integration Semiconductor Devices, “ USA patent 5,719,089, 02/17/1998~02/16/2018.

M. J. Cherng and P. W. Li, “Method for Etching Polymer-Assisted Reduced Small Contacts for Ultra Large Scale Integration Semiconductor Devices, “ ROC patent 090820, 10/21/1997~08/28/2016.

Y. Ho, M. J. Cherng, and P. W. Li, “Method for Etching-Assisted Technique for Capacitor Fabrication,” ROC patent 082555, 11/15/1996~03/15/2016.

Dr. Li was awarded Distinguished Young Electrical Engineer from Chinese Electrical Engineering Society in 2005, Distinguished Professorship from National Central University in 2006-2013, Top 10 Rising Stars in Taiwan (Science and Technology) from Central News Agency in 2008.

Dr. Li has supervised 10 PhD students and more than 45 Master students.