論文著述：

 

A. 期刊論文

 

1.     W. T. Lai, P. H. Liao, A. P. Homyk, A. Scherer, and P. W. Li, 2012, “SiGe quantum dots on Si pillars for visible to near-infrared photodetection,” submitted to IEEE Photonic Technology Lett.

2.     M. T. Hung, C. C. Wang, J. Y. Chiou, J. C. Hsu, S. W. Lee, T. M. Hsu, P. W. Li, 2012, “Large reduction in thermal conductivity for Ge quantum dots embedded in SiO2 system,” Applied Physics Letters (in press).

3.     M. H. Kuo, C. C. Wang, W. T. Lai, Tom George, and P. W. Li, 2012, “Designer Ge quantum dots on Si: A heterostructure configuration with enhanced optoelectronic performance,” Applied Physics Letters, vol. 101, 223107. –IEDMS, Best Poster Award

4.     I. H. Chen, K. H. Chen, D. M. T. Kuo, and P. W. Li, 2012, “Single Ge quantum dot placement along with self-aligned electrodes for effective management of single charge tunneling,” IEEE Trans. Electron Devices, vol. 59, p. 3224. SCI/0

5.     C. Y. Chien, J. W. Hsu, P. C. Chiu, J. I. Chyi, and P. W. Li, 2012, “Gate stack engineering and thermal treatment on electrical and interfacial properties of Ti/Pt/HfO2/InAs pMOS capacitors,” Active and Passive Electronic Components (in press). EI

6.     C. C. Wang, K. H. Chen, I. H. Chen, H. T. Chang, W. Y. Chen, J. C. Hsu, S. W. Lee, T. M. Hsu, M. T. Hung, and P. W. Li, 2012, “CMOS-compatible generation of self-organized 3D Ge quantum dot array for photonic and thermoelectric applications,” IEEE Trans. Nanotechnology, vol. 11, no. 4, p. 657-660. SCI/1

7.     J. E. Chang, P. H. Liao, C. Y. Chien, J. C. Hsu, M. T. Hung, S. W. Lee, W. Y. Chen, T. M. Hsu, T. George, and P. W. Li, 2012, “Matrix and quantum confinement effects on optical and thermal properties of Ge quantum dots,” Journal of Physics D: Applied Physics, vol. 45, 15303. SCI/2

8.     C. Y. Chien, Y. J. Chang, K. H. Chen, W. T. Lai, T. George, A. Scherer, and P. W. Li, 2011, “Nanoscale, catalytically-enhanced local oxidation of silicon-containing layers by “burrowing” Ge quantum dots,” Nanotechnology, vol. 22, p. 435602. SCI/3

9.     Edward S Yang, Pei-Wen Li, Bernd Nilius, and Geng Li, 2011, “Ancient Chinese medicine and mechanistic evidence of acupuncture physiology,” Pflugers Archiv-European Journal of Physiology, vol. 462, p. 645-653. SCI/2

10.Geng Li, Jieming Liang, Pei-Wen Li, Xiaoqiang Yao, Peter Zhong Pei, Wei Li, Qi-Hua He, Xifei Yang, Queenie CC Chan, Paul YS Cheung, Qi Yuan Ma, Siu Kam Lam, Patrick YC Cheng, Edward S. Yang, 2011, ”Physiology and cell biology of acupuncture observed in calcium signaling activated by acoustic shear wave,” Pflugers Archiv-European Journal of Physiology, vol. 462, p. 587-597. SCI/2

11.K. H. Chen, C. Y. Chien, W. T. Lai, T. George, A. Scherer, and Pei-Wen Li, 2011, “Controlled heterogeneous nucleation and growth of germanium quantum dots on nano-patterned silicon dioxide and silicon nitride substrates,” Journal of Crystal Growth & Design, vol. 11, p. 3222-3226. DOI: 10.1021/cg200470f. SCI/2

12.W. T. Lai, C. W. Wu, C. C. Lin, and P. W. Li, 2011, “Analysis of carrier transport in tri-gate Si nanowire MOSFETs,” IEEE Trans. Electron Devices, vol. 58, p. 1336-1343. SCI

13.Hsing-Wang Tsai, Zing-Way Pei, Ting-Hsiang Huang, Pei-Wen Li, Yi-Jen Chan, 2011, “Anode engineering in a polymer solar cell and applied on plastic substrate,” Solar Energy Materials and Solar Cells, vol. 95, p. 611 SCI

14.C. Y. Chien, Y. R. Chang, R. N. Chang, M. S. Lee, W. Y. Chen, T. M. Hsu, and P. W. Li, 2010, “Formation of Ge quantum dots array in layer-cake technique for advanced photovolatics,” Nanotechnology, vol. 21, p. 505201 SCI/3

15.Po-Yuan Lo, Pei-Wen Li, and Yi-Jen Chan, 2010, “Stability improvement of organic thin-film transistors using stacked gate dielectrics,” IEEE Trans. Electron Devices, vol. 57, p. 3131. SCI

16.Hsing-Wang Tsai, Zing-Way Pei, Ting-Hsiang Huang, Pei-Wen Li, Yi-Jen Chan, 2010, “A conductor/insulator/semiconductor polymer solar cell by an ultra-thin polymer insulator,” Organic Electronics, vol. 11, p. 1796–1801, SCI/3

17.H. K. Lin, D. W. Fan, Y. C. Lin, P. C. Chiu, C. Y. Chien, P. W. Li, J. I. Chyi, C. H. Ko, T M. Kuan, M. K. Hsieh, W. C. Lee, C. H. Wann, 2010, “E-beam-evaporated Al2O3 for InAs/AlSb metal–oxide–semiconductor HEMT development,” Solid-State Electronics, vol. 54, p. 505. SCI/7

18.K. H. Chen, C. Y. Chien, and P. W. Li, 2010, “Precise Ge quantum dot placement for quantum tunneling devices,” Nanotechnology, vol. 21, 055302. SCI/11

19.I. H. Chen, S. S. Tseng, and P. W. Li, 2009, “Thermal stability of germanium quantum dots phototransistors for near ultra-violet applications,” IEEE Photonics Technology Letters, vol. 21, p. 1674. SCI/0

20.J. R. Chen, H. T. Lin, G. W. Hwang, Y. J. Chan and P. W. Li, 2009, “Temperature-dependent physical and electrical characteristics of polymer/RAFT-polymer stabilized nanoparticles system for organic nonvolatile memory,” Nanotechnology, vol. 20, 255706. SCI/7

21.P. Y. Lo, P. W. Li, Z. W. Pei, J. Hou, and Y. J. Chan, 2009, “Enhanced P3HT OTFT transport performance using double gate modulation scheme,” IEEE Electron Device Letters, vol. 30, 629. SCI/5

22.W. T. Lai, D. M. T. Kuo, and P. W. Li, 2009, “Transient current through a single germanium quantum dot at room temperature”, Physica E, vol. 41, 886-889. SCI/7

23.S. S. Tseng, I. H. Chen, and P. W. Li, 2008, “Photoresponses in poly-Si phototransistors incorporating germanium quantum dots in the gate dielectrics,” Applied Physics Letters, vol. 93, p. 191112. SCI/5

24.S. S. Tzeng and P. W. Li, 2008, “Enhanced 400-600 nm photoresponsivity of metal-oxide- semiconductor diodes with multi-stack germanium quantum dots,” Nanotechnology, vol. 19, 235203. SCI/7

25.G. L. Chen, D. M. T. Kuo, W. T. Lai, and P. W. Li, 2007, “Tunneling spectroscopy of germanium quantum-dot in single-hole transistors with self-aligned electrodes,” Nanotechnology, vol. 18, p. 475402. SCI/10

26.T. -H. Lee, C. -H. Huang, Y. -Y. Yang, T. Suryasindhu, and P. W. Li, 2007, “Nanoscale thick layer transfer of hydrogen-implanted wafer by using polycrystalline silicon sacrificial layer,” Applied Physics Letters, vol. 91, p.203119. SCI/1

27.T. -H. Lee, Y. -Y. Yang, C. -H. Huang, P. W. Li, and T. Suryasindhu, 2007, “Fabrication of a nano-scale single crystalline silicon thin film on insulator,” Electrochemical and Solid-State Letters, vol. 10, K17-19. SCI

28.S. Maikap, P. J. Tzeng, C. H. Lin, T. Y. Wang, H. Y. Lee, S. S. Tzeng, C. C. Wang, T. C. Tien, L. S. Lee, P. W. Li, J. R. Yang and M. J. Tsai, 2007, “TiN nanocrystal flash memory devices,” International Journal of Nanomanufacturing, vol. 2, no. 5, p. 407-419. (invited paper) (EI)

29.W. T. Lai and P. W. Li, 2007, “Growth kinetics and related physical/electrical properties of Ge quantum-dots formed by thermal oxidation of Si1-xGex-on-insulator,” Nanotechnology, vol. 18, p. 145402. (SCI, IF : 3.5)

30.Y. C. Hsu, W. T. Lai, P. W. Li, and D. M. T. Kuo, 2007, “Room-temperature observation of current bistability and fine structures in germanium quantum dots/SiO2 resonant tunneling diodes,” Physica E, vol. 38, p.135-138. (SCI, IF : 1.1)

31.J. H. Wu and P. W. Li, 2007, “Ge nanocrystals metal-oxide-semiconductor transistors with Ge nanocrystals formed by thermal oxidation of poly-Si0.88Ge0.12,” Semiconductor Science and Technology, vol. 22, p. S89-S92. (SCI, IF : 1.6)

32.P. W. Li, M. T. Kuo, and Y. C. Hsu, 2006, “Photo-excitation effects on carrier transports in Germanium quantum dot resonant tunneling diodes,” Applied Physics Letters, vol. 89, p.133105. (SCI, IF : 4.2)

33.P. W. Li, M. T. Kuo, W. M. Liao, and W. T. Lai, 2006, “Study of tunneling currents through germanium quantum dot single-hole and -electron transistors,” Applied Physics Letters. vol. 88, p. 213117 (SCI, IF: 4.2)

Also selected for the June 12, 2006 issue of Virtual Journal of Nanoscale Science & Technology.

34.W. M. Liao, P. W. Li, M. T. Kuo and W. T. Lai, 2006, “Room-temperature transient carrier transports in germanium single-electron/-hole transistors,” Applied Physics Letters, vol. 88, p. 182109. (SCI, IF : 4.2)

Also selected for the May 22, 2006 issue of Virtual Journal of Nanoscale Science & Technology.

35.M. T. Kuo and P. W. Li, 2006, “Interdot Coulomb repulsion effect on the charge transport of parallel double single electron transistors,” Jpn. J. Appl. Physics, vol. 45, no. 4A, p. 2281-2287. (SCI, IF : 1.3)

36.Huang, C.H.; Chang, C.L.; Yang, Y.Y.; Suryasindhu, T.; Liao, W.-C.; Su, Y.-H.; Li, P.W.; Liu, C.-Y.; Lai, C.S.; Ting, J.-H.; Chu, C.S.; Lee, C.-S.; Lee, T.-H., 2006, “Nanothick layer transfer of hydrogen-implanted wafer using polysilicon sacrificial layer,” Materials Research Society Symposium Proceedings, v 921, p 84-89. (EI)

37.S. S. Liu, P. W. Li, W. H. Lan, and W. J. Lin, 2006, “The improvement of GaN p-i-n UV sensor by 8-pairs AlGaN/GaN superlattices structure,” Material Science and Engineering B Solid State Materials For Advanced Technology, vol. 124, no. 1, p. 33-36. (SCI, IF : 1.6)

38.W. M. Liao and P. W. Li, 2005, “Temperature stability of SiGe dynamic threshold-voltgae MOSFETs,” Japanese Journal of Applied Physics, vol. 44, no. 12, p.8453-8455. (SCI, IF : 1.28)

39.S. S. Liu, P. W. Li, W. H. Lan, and W. J. Lin, 2005, “Improvements of AlGaN/GaN p-i-n UV sensors with graded AlGaN Layer for the UV-B (280-320 nm) detection,” Material Science and Engineering B Solid State Materials For Advanced Technology, vol. 122, no. 9, p. 196-200. (SCI, IF : 1.6)

40.M. T. Kuo and P. W. Li, 2005, “Tunneling current through a single Germanium quantum dot,” Japanese Journal of Applied Physics, vol. 44, no. 9A, p.6429-6434. (SCI, IF : 1.28)

41.S. S. Liu, P. W. Li, and W. J. Lin, 2005, “The improvements of GaN p-i-n UV sensor on 10 off-axis sapphire substrate,” Material Science and Engineering B Solid State Materials For Advanced Technology, vol. 121, no. 7, p. 85-91. (SCI, IF : 1.6)

42.S. S. Liu, P. W. Li, W. H. Lan, and W. J. Lin, 2005, “High temperature high humidity and electrical static discharge stress effects on GaN PIN UV sensor,” Material Science and Engineering B Solid State Materials For Advanced Technology, vol. 121, no. 7, p. 29-33. (SCI, IF : 1.6)

43.P. W. Li, W. M. Liao, M. T. Kuo, S. S. Tseng, P. S. Chen, and M. –J. Tsai, 2004, “Optical and electronic properties of Ge quantum dots formed by selective oxidation of SiGe/Si-on-Insulator,” Japanese Journal of Applied Physics, vol. 43, no. 11 A, p. 7788-7792. (SCI, IF : 1.28)

44.P. W. Li, W. M. Liao, M. T. Kuo, S. W. Lin, P. S. Chen, S. C. Lu, and M. –J. Tsai, 2004, “Fabrication of a germanium quantum-dot single electron transistor with large Coulomb-blockade oscillations at room temperatures,” Applied Physics Letters, vol. 85, p. 1532. (SCI, IF : 4.3)

Also selected for the Sep. 13, 2004 issue of Virtual Journal of Nanoscale Science & Technology.

45.P. W. Li, W. M. Liao, S. W. Lin, P. S. Chen, S. C. Lu, and M. –J. Tsai, 2003, “Formation of atomic-scale Germanium quantum dots by selective oxidation of SiGe/Si-on-Insulator,” Apply Physics Letters, vol. 83, p.4628-4630. (SCI, IF : 4.3)

Also selected for the December 8, 2003 issue of Virtual Journal of Nanoscale Science & Technology.

46.P. W. Li, W. M., Liao, C. C. Shih, T. S. Kuo, L. S. Lai, Y. T. Tseng, and M. –J. Tsai, 2003, “Effect of substrate biasing on Si/SiGe heterostructure MOSFETs for low power circuit applications,” IEEE Electron Device Letters, vol. 24, no. 7, p.454-456. SCI, IF : 2.7)

47.Y. S. Huang, C. J. Lin, C. H. Wang, N. Y. Li, C. C. Fan, and P. W. Li, 2003, “Photoreflectance and surface photovoltage spectroscopy characteristics of an InGaP/InGaAsN/GaAs NPN DHBT structure,” IEE Proceedings-Optoelectronics, vol. 150, no. 1, p. 99-101. (SCI, IF : 1.2)

48.P. W. Li, W. M., Liao, C. C. Shih, T. S. Kuo, L. S. Lai, Y. T. Tseng, and M. –J. Tsai, 2003, “High performance Si/SiGe heterostructure MOSFETs for low power analog circuit applications,” Solid-State Electronics, vol. 47, no. 6, p. 1095-1098. (SCI, IF : 1.2)

49.P. W. Li and W. M. Liao, 2002, “Low-frequency noise analysis of Si/SiGe channel pMOSFETs,” Solid-State Electronics, vol. 46, no. 12, p. 2281-2285. (SCI, IF : 1.2)

50.P. W. Li and W. M. Liao, 2002, “Design of high speed Si/SiGe heterojunction complementary MOSFETs with reduced short-channel effects,” Journal of Vacuum Science and Technology A, vol. 20, p.1030-1033. (SCI, IF : 1.6)

51.P. W. Li and W. M. Liao, 2002, “Analysis of Si/SiGe channel pMOSFETs for deep-submicron scaling”, Solid State Electronics, vol. 46, p.39-44. (SCI, IF : 1.2)

52.J. S. Liang, Y. S. Huang, C. W. Tien, Y. M. Chang, C. W. Chen, N. Y. Li, and P. W. Li, 2001, “Surface photovoltage spectroscopy characterization of a GaAs/GaAlAs vertical cavity surface emitting laser structure: angle dependence,” Apply Physics Letters, vol. 79, no. 20, p.3227-3229. (SCI, IF : 4.3)

53.C. J. Lin, Y. S. Huang, N. Y. Li, P. W. Li and K. K. Tiong, 2001, "Polarized-photoreflectance characterization of an InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor structure", Journal of Applied Physics, Vol. 90, p.4565-4569. (SCI, IF : 2.1)

54.P. W. Li, H. C. Guang, and N. Y. Li, 2000, “Ellipsometric study of the optical properties of InGaAsN layers,” Japanese Journal Applied Physics, vol.39, no.9AB, pp. L898-900. (SCI, IF : 1.28)

55.P. W. Li, N. Y. Li, and Q. Hong, 2000, “Effects of ex-situ annealing on electrical characteristics of p-n-p AlGaAs/InGaAsN/GaAs double heterojunction bipolar transistors,” Solid-State Electronics, vol.44, pp.1169-1172. (SCI, IF : 1.2)

56.N. Y. Li, C. P. Hains, K. Yang, J. Lu, P. W. Li, and J. Cheng, 1999, “Organometallic vapor phase epitaxy growth and optical characteristics of almost 1.2 ��m GaInNAs three-quantum-well laser diodes”, Apply Physics Letters, vol. 75, p.1051-1053. (SCI, IF : 4.6)

57.S. W. Chan, L. Zhao, C. Chen, P. W. Li, and E. S. Yang, 1995, “High performance oxide on SiGe and the interface,” Microscopy of Semiconducting Materials, Institute of Physics Conference series 146: 491-494. (SCI, IF : 1.0)

58.P. W. Li, E. S. Yang, Y. F. Yang, and X. Li, 1995, Eletron Cyclotron resonance Microwave Plasma Enhanced SiGe Oxidation and MOS Transistors, Inst. Phys. Conf., No. 141, Chap 6, p. 711-716. (SCI, IF : 1.0)

59.P. W. Li, E. S. Yang, Y. F. Yang, J. Chu, and B. S. Meyerson, 1994, “SiGe pMOSFETs with gate oxide fabricated by microwave electron cyclotron resonance plasma”, IEEE Electron Device Letters, vol. 15, p.402-405. (SCI, IF : 2.7)

60.P. W. Li and E. S. Yang, 1993, “SiGe gate-oxide prepared at low-temperatures in an electron   cyclotron resonance plasma”, Apply Physics Letters, vol. 63, p.2938-2940. (SCI, IF : 4.6)

61.P. W. Li, H. K. Liou, E. S. Yang, S. S. Iyer, T. P. Smith III, and Z. Lu, 1992, “Formation of Stoichiometric SiGe Oxide by Electron Cyclotron Resonance Plasma”, Apply Physics Letters, vol. 60,  p.3265- 3267. (SCI, IF : 4.6)

62.P. W. Li, Q. Wang, and E. S. Yang, 1992, “Chemical and Electrical Characterization of AlGaAs/GaAs Heterojunction Bipolar Transistors Treated by Electron Cyclotron Resonance Plasma,” Apply Physics Letters, vol. 60, p.1996-1998. (SCI, IF : 4.6)

63.Q. Wang, E. S. Yang, P. W. Li, Z. Lu, R. M. Osgood, and W. I. Wang, 1992, “Electron Cyclotron Resonance Hydrogen and Nitrogen Plasma Surface Passivation of AlGaAs/GaAs Heterojunction Bipolar Transistors”, IEEE Electron Device Letters, vo. 13, p.83-85. (SCI, IF : 2.7)

         

Ｂ. 研討會論文

 

1.       P. W. Li, (Invited talk) 2013, “Designer Ge quantum-dot channel transistors,” 2013 Collaborative Conference on Materials Research, Jeju, Korea.

2.       P. W. Li, (Invited talk) 2012, “Designer Ge quantum dots on Si-containing layers for Nanoelectronic and Nanophotonic Devices”, 2nd International conference on Small Science, Orlando, FL, USA (Dec. 16-19).

3.       P. W. Li, (Invited talk) 2012, “CMOS-compatible precise placement of Ge quantum dots for nanoelectronic, nanophotonic, and energy conversion devices“, 222nd Rim Pacific ECS Meeting - Honolulu, Hawaii, (Oct. 7-12)

4.       C. Y. Chien, Y. J. Chang, and P. W. Li, “Wavelength Tunable Germanium Quantum-Dot Visible Photodetectors,” 2012 IEDMS Kaohsiung, Taiwan. (Nov 29-30, 2012)

5.       M. H. Kuo, C. C Wang, W. T. Lai, Tom George, and P. W. Li, “Designer Ge QDs on Si for Enhanced Near Infrared Photodetection,” 2012 IEDMS Kaohsiung, Taiwan. (Nov 29-30, 2012)- IEDMS, Best Poster Award

6.       K. H. Chen, C. C. Wang, W. T. Lai, C. Y. Chien, Tom George and P. W. Li, “Evolution of Germanium Quantum Dots Migration in Si-bearing Layer Mediated by Local Oxidation,” 2012 IEDMS Kaohsiung, Taiwan. (Nov 29-30, 2012)

7.       C. C. Wang, J. Y. Chiou, J. C. Hsu, M. T. Hung, and P. W Li, “Thermal and electrical properties of nano-scale Si1-xGex pillars,” 2012 IEDMS Kaohsiung, Taiwan. (Nov 29-30, 2012)

8.       T. C. Hsu, K. H. Chen, C. Y. Chien, I. H. Chen, C. C. Wang, Tom George, and P. W. Li, “A Novel Ge/Si and Ge/SiO2 Interface Engineering for Metal-Oxide-Semiconductor Configuration,” 2012 IEDMS Kaohsiung, Taiwan. (Nov 29-30, 2012)

9.       I. H. Chen, K. H. Chen, and P. W. Li, “Hole tunneling spectroscopy of quantum states in Ge quantum dot,” 2012 IEDMS Kaohsiung, Taiwan. (Nov 29-30, 2012)

10.   Y. Y. Hsiao, I. H. Chen, and P. W. Li, “Geometry and morphology effects on electrical resistivity and stability of NiSi nanowires,” 2012 IEDMS Kaohsiung, Taiwan. (Nov 29-30, 2012)

11.   K.-H. Chen, I.-H. Chen, C.-Y. Chien, C.-C. Wang, T. George and P.-W. Li, “Evolution of Germanium quantum dots migration in Si bearing layer mediated by thermal oxidation”, 2012, 222nd Rim Pacific ECS Meeting - Honolulu, Hawaii, (Oct. 7-12).

12.   I. H.Chen , K.H Chen, M.T. Kuo, and P.W. Li, 2012, “Placement of single Ge quantum dot along with self-aligned electrodes for effective single hole tunneling” 2012 International Conference on Solid-State Devices and Materials, Kyoto (Sep.25-27).

13.   C.C. Wang , J.Y. Chiou, J.C. Hsu M.T Hung, H.T Chang and P.W. Li, 2012, “Quantum size effects on phonon transport in Ge quantum dot/SiO2 system,“ 2012 International Conference on Solid-State Devices and Materials, Kyoto Japan (Sep.25-27).

14.   W.T. Lai, P.H. Liao, A. Homyk, A. Scherer and P.W. Li, 2012, ”SiGe quantum dots on Si pillars for visible photodetection” 2012 International Conference on Solid-State Devices and Materials,   Kyoto Japan( Sep.25-27).

15.   Ching-Chi Wang, Kuan-Hung Chen, Inn-Hao Chen, Wen-Yen Chen, Tzu-Min Hsu, and Pei-Wen Li, “Fabrication of thin-film-like three-dimensional Ge quantum dots pillar array for energy harvest/conversion applications,” Materials Research Society Spring Meeting Symposia, 2012.

16.   I. H. Chen, K. H. Chen, C. C. Wang, and P. W. Li, “CMOS-Compatible Precise Placement of Ge Quantum Dots for Nanoelectronic, Nanophotonic, and Energy Conversion Devices,” 2012 Pacific rim Meeting on Electrochemical and Solid-state Science, Honolulu, Hawaii, USA. (NSC 100-2120-M-008-004 and 99-2221-E-008-095-MY3).

17.   I. H. Chen, K. H. Chen, and P. W. Li, “Single Ge quantum dot placement along with self-aligned electrodes for effectivemanagement of single electron tunneling,” 2012 Silicon Nanoelectronics Workshop, Honolulu, Hawaii, USA. (NSC 100-2120-M-008-004 and 99-2221-E-008-095-MY3).

18.   Y. J. Chang, J. E. Chang, C. Y. Chien, J. C. Hsu, M. T. Hung, S. W. Lee, and P. W. Li, “Formation of Ge Quantum Dots in Silicon Oxide and Silicon Nitride Matrices and Associated Optical and Thermal Properties,” 2011 Material Research Society Spring meeting, San Francisco, USA.

19.   I. H. Chen, K. H. Chen, and P. W. Li, “Single Ge quantum dot placement along with self-aligned electrodes for effective management of single electron tunneling,” 2011 International Electron Device and Material Symposium, Taipei, Taiwan (NSC 99-2120-M-008-004 and 99-2221-E-008-095-MY3).

20.   I. H. Chen, K. H. Chen, and P. W. Li, “Experimental study of the tunneling spectroscopy of Ge quantum dot single electron transistors with self-aligned electrode,” 2011 Silicon Nanoelectronics Workshop, Kyoto, Japan (NSC 99-2120-M-008-004 and 99-2221-E-008-095-MY3).

21.   K. H. Chen, I. H. Chen, and P. W. Li, “Enhanced gate modulation of Ge single electron transistors with self-aligned electrodes,” 2011 Silicon Nanoelectronics Workshop, Kyoto, Japan (NSC 99-2120-M-008-004 and 99-2221-E-008-095-MY3).

22.   C. Y. Chien, P. C. Chiu, J. I. Chyi, and P. W. Li, “Influences of gate metal and thermal treatment on electrical and interfacial properties of Ti/Pt/HfO2/InAs pMOS capacitors,” 2011 International Electron Device and Material Symposium, Taipei, Taiwan.

23.   C. Y. Chien, Y. J. Chang, K. H. Chen, W. T. Lai, Tom George, and P. W. Li, “Nanoscale enhanced local oxidation of silicon-nitride layers by “burrowing” Ge quantum dots,” 2011 International Electron Device and Material Symposium, Taipei, Taiwan.

24.   K. H. Chen, I. H. Chen, and P. W. Li, “Internal structure and electrical roperties of Ge quantum dot in single-electron transistors,” 2010 Silicon Nanoelectronics Workshop, Honolulu, Hawaii, USA. (NSC 98-2120-M-008-001).

25.   C. C. Wang, K. H. Chen, C. Y. Chien, and P. W. Li, “Formation of thin-film-like Ge quantum dots array in thermally oxidizing SiGe pillar technique for energy harvest/conversion applications,” 2010 International Conference on Solid-State Devices and Materials, Tokoyo, Japan.

26.   C. C. Wang, K. H. Chen, C. Y. Chien, and P. W. Li , 2010, “Formation of thin-film-like Ge quantum dots array in thermally oxidizing SiGe pillar technique for energy harvest/conversion applications’’ International Electron Device and Material Symposium, Jhong-li, Taoyuan, Taiwan.(Nov 18-19)-Best student paper award

27.   P. H. Chen, P. Y. Lo, T. Y. Hu, and P. W. Li, “Bias-temperature-instability and thermal anneal effects of organic thin-film transistors,” 2010 International Conference on Solid-State Devices and Materials, Tokoyo, Japan.

28.   C. Y. Chien, Y. R. Chang, R. N. Chang, M. S. Lee, and P. W. Li, “Formation of 3D Ge quantum dots array for advanced photovolatics in layer-cake technique, 2010 IEEE Nanotechnology Conference, Seoul, Korea, Aug, 2009.

29.   K. H. Chen, I. H. Chen, and P. W. Li, “Effective Ge single electron transistors with precise quantum dot placement,”, 2010 IEEE Si Nanoelectronics Workshop, Hawaii, USA.

30.   K. H. Chen, I. H. Chen, and P. W. Li, “Internal structure and electrical properties of Ge quantum dot in single-electron transistors,” 2010 International Electron Device and Material Symposium, Taoyuan, Taiwan. (NSC 98-2120-M-008-001).

31.   I. H. Chen, K. H. Chen, H. H. Chou, and P. W. Li, “CMOS-compatible fabrication of room-temperature Ge QD single hole transistors,” 2010 IEEE Si Nanoelectronics Workshop, Hawaii, USA.

32.   I. H. Chen, K. H. Chen, H. H. Chou, and P. W. Li, “CMOS-compatible Fabrication of Room-temperature Ge QD Single Hole Transistors,” 2010 International Electron Device and Material Symposium, Taoyuan, Taiwan. (NSC 98-2120-M-008-001).

33.   I. H. Chen, S. S. Tseng, and P. W. Li, "Thermal stability of poly-Si phototransistors incorporating Ge quantum dots for near ultraviolet light detection and amplification," 2009 International Electron Device and Material Symposium, Taoyuan, Taiwan.

34.   W. T. Lai, C. W. Wu, C. C. Lin, and P. W. Li, "Transport Characteristics in Tri-gate Si Nanowire MOSFETs," 2009 International Electron Device and Material Symposium, Taoyuan, Taiwan.

35.   K. H. Chen, C. Y. Chien, W. T. Lai, S. W. Lee, and P. W. Li, "Positioning and numbering Ge quantum dots for effective single electron devices," 2009 International Electron Device and Material Symposium, Taoyuan, Taiwan.

36.   I. H. Chen, S. S. Tseng, and P. W. Li, “Thermal stability of poly-Si phototransistors incorporating Ge quantum dots for near ultraviolet applications,” 2009 International Conference on Solid-State Devices and Materials, Sendai, Japan.

37.   K. H. Chen, C. Y. Chieh, W. T. Lai, and P. W. Li, “Positioning and numbering Ge quantum dots for effective quantum electrodynamic devices,” 2009 International Conference on Solid-State Devices and Materials, Sendai, Japan.

38.   I. H. Chen, S. T. Sheng, and P. W. Li, “Thermal stability of germanium quantum dots phototransistors for near ultra-violet applications,” 10th IEEE Si Nanoelectronics Workshop, Kyoto, Japan, 2009

39.   W. T. Lai, C. W. Wu, and P. W. Li, “Temperature-dependent quantum transport characteristics in Si-nanowire MOSFETs,” 10th IEEE Si Nanoelectronics Workshop, Kyoto, Japan, 2009.

40.   K. H. Chen, C. Y. Chien, W. T. Lai, S. W. Lee, and P. W. Li , “Positioning and numbering Ge quantum dots for effective quantum tunneling devices,” 2009 IEEE  Nanotechnology Conference, Geneva, Italy, 2009/July 12-14, 2009.

41.   Wei-Ting Lai, C. C. Chen, David M. T. Kuo, and Pei-Wen Li, 2008, “Tunneling spectroscopy of germanium quantum-dot in single-hole transistors with self-aligned electrodes,” 2008 International Conference on Solid-State Devices and Materials, Japan.

42.   S. S. Tseng, I. H. Chen, and P. W. Li, 2008, ““Photoresponses in Poly-Si Phototransistors Incorporating Germanium Quantum Dots in the Gate Dielectrics,” IEEE Nanotechnology Conference, Texas, USA. IEEE-NANO, p 48-50, 2008 (EI)

43.   W. T. Lai, G. H. Chen, David M. T. Kuo, and P. W. Li, 2008, “Multi-peak Negative Differential Resistance Arising from Tunneling Current through Few Germanium Quantum Dots,” IEEE Si Nanoelectronics Workshop, Hawaii, USA.

44.   S. H. Hsu, L. Y. Yang, and P. W. Li, 2008, “Low Power Enhanced Charge Retention of Nanocrystal Metal-oxide-semiconductor Capacitors with Multi-stack Germanium Quantum Dots”, 2008 the 4th International Silicon Germanium Device and Technology Meeting, HsinChu, Taiwan.

45.   S. H. Hsu, W. T. Lai, and P. W. Li, 2007, “Suppression of gate-induced tunneling barrier lowering on Germanium Quantum-dot Single-hole Transistors with Self-aligned Electrodes,” 2007 International Electron Device and Material Symposium.

46.   S. Tseng and P. W. Li, 2007, “Photoresponse enhancement of eetal-Oxide-Semiconductor photodetector with multi-stack germanium quantum dots embedded in oxide,” 2007 International Electron Device and Material Symposium, HsinChu, Taiwan.

47.   G. L. Chen, W. T. Lai, and P. W. Li, 2007, “Large Coulomb-blockade Oscillations on Germanium Quantum-dot Single-hole Transistor,” 2007 International Electron Device and Material Symposium, HsinChu, Taiwan.

48.   S. Tseng and P. W. Li, 2007, “Photoresponse enhancement of metal-oxide-semiconductor near ultraviolet photodetector with multi-stack germanium quantum dots embedded in oxide,” oral presentation in 2007 International Conference on Solid-State Devices and Materials, Japan.

49.   W. T. Lai and P. W. Li, 2007, “Transient Behavior of Germanium Quantum-dot Resonant Tunneling Diode,” oral presentation in to 2007 International Conference on Solid-State Devices and Materials, Japan.

50.   S. H. Hsu, W. T. Lai, and P. W. Li, “High performance Germanium Quantum-dot Single-hole Transistors with Self-aligned Electrodes,” oral presentation in 2007 International Conference on Solid-State Devices and Materials, Japan.

51.   G. L. Chen, W. T. Lai, M. T. Kuo, and P. W. Li, 2007, “Room-temperature Observation of Large Coulomb-blockade Oscillations from Germanium Quantum-dot Single-hole Transistors with Self-aligned Electrodes,” oral presentation in 2007 IEEE Nanotechnology Conference, Hong Kong.

52.   S. Maikap, P. J. Tzeng, S. S. Tseng, T.-Y. Wang, C. H. Lin, H. Y. Lee, C. C. Wang, T. C. Tien, L. S. Lee, P. W. Li, J.-R. Yang, M.-J. Tsai, 2007, “High-K HfO2/TiO2/HfO2 multilayer quantum well flash memory devices,” 2007 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA. (EI)

53.   S. Tseng, W. T. Lai, and P. W. Li, 2006, “Optical and Electrical Characteristics of Ge Quantum Dots Formed by Selective Oxidation of Si0.85Ge0.15 and the Related Interdigited Photodiode”, 2006 International Electron Device and Material Symposium (Best Paper)

54.   S. Maikap, P. Tzeng, S. Tseng, C. Lin, H. Lee, C. Wang, L. Lee, T. Tien, S. Lo, P. W. Li, M. Tsai,  2006, “High density and uniform ALD TiN nanocrystal flash memory devices with large memory window and good retention,” 2006 International Electron Device and Material Symposium (Best Paper)

55.   W. T. Lai and P. W. Li, 2006, “Fabrication of Ge quantum-dots by oxidation of Si1-xGex-on-insulator nanowires and its applications to resonant tunneling diodes and single-electron/-hole Transistors,” oral presentation in 2006 International Conference on Solid-State Devices and Materials, Yokohama, Japan.

56.   S. Maikap, P. Tzeng, S. Tseng, C. Lin, H. Lee, C. Wang, L. Lee, T. Tien, S. Lo, P. W. Li, M. Tsai, “High density and uniform ALD TiN nanocrystal flash memory devices with large memory window and good retention,“ oral presentation in 2006 International Conference on Solid-State Devices and Materials, Yokohama, Japan. 

57.   Y. C. Hsu, P. W. Li, and David M. T. Kuo, 2006, “Room temperature observation of current bistability and find structures in germanium quantum dits/SiO2 resonant tunneling diodes,” oral presnetation in European Material Research Symposium, Nice, France.

58.   R. H. Wu and P. W. Li, 2006, “Ge nanocrystal Metal-oxide-semiconductor capacitors formed by oxidation of poly-Si0.88Ge0.12”, oral presentation in the 3rd International Silicon Germanium Device and Technology Meeting, Princeton, USA. (EI)

59.   W. T. Lai, P. W. Li, and David M. T. Kuo, 2006, “Room-temperature steady-state and transient carrier transport properties of Germanium single electron/hole transistors,” presentation in the 3rd International Silicon Germanium Device and Technology Meeting, Princeton, USA. (EI)

60.   S. S. Tseng, W. T. Lai, and P. W. Li, 2006, “Metal-insulator-metal photodetectors with Ge quantum dots formed by selective oxidation of single crystalline-Si0.85Ge0.15/Si-on-insulator,” oral presentation in the 3rd International Silicon Germanium Device and Technology Meeting, Princeton, USA. (EI)

61.   C. H. Huang, C. L. Chang, Y. Y. Yang, T. Suryasindhu, W. C. Liao, Y. H. Su, P. W. Li, C. Y. Liu, C. S. Lai, J. H. Ting, C. S. Chu, and T. H. Lee, 2006, “Nanothick Layer Transfer of Huydrogen-implanted Wafer Using Polysilicon Sacrificial Layer,” presented in 2006 Material Research Symposium Spring Meeting, San Francisco, USA.

62.   P. W. Li, 2006, “Physical Properties of Ge Quantum Dots and Room-Temperature Ge Single-electron/hole Transistors”, invited talk, Symposium on Nano Device Technology, Hsin, Taiwan.

63.   P. W. Li, 2006, “Ge Quantum Dots Transistors,” invited talk, presented at the annual meeting of the Physics Society, Taiwan, Republic of China（中國物理學會）, January 18, 2006, Taipei, Taiwan.

64.   W. T. Lai, W. M. Laio, P. W. Li and M. T. Kuo, 2005, “Effects of Parasitic MOSFETs and Traps on Charge Transport Properties of Germanium Quantum Dot Single Electron/Hole Transistors,” oral presentation in 2005 IEEE International Conference on Electronic Devices and Solid-State Circuits, HongKong. (EI)

65.   W. M. Liao, W. T. Lai, P. W. Li, M. T. Kuo, P. S. Chen, and M. –J. Tsai, 2005, “Strong Quantum Confinement and Coulomb Blockade Effects in Ge Quantum Dots/SiO2 system,” Proceeding of 5th IEEE Nanotechnology Conference, Nagoya, Japan.

66.   W. M. Liao, C. F. Shih, and P. W. Li, 2005, “Thermal Sensitivity of SiGe Dynamic Threshold pMOSFETs,” 12th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), Singapore.

67.   W. T. Lai, W. M. Liao, M. T. Kuo, and P. W. Li, 2005, “Quantum Confinement Effects on the Electronic Structure of Ge Quantum-Dots Formed by Selective Oxidation of SiGe-on-Insulator,” present in the International Conference on Silicon Epitaxy and Heterostructures, Hyogo, Japan.

68.   M. T. Kuo and P. W. Li, 2005, “Single Electron Transistor at High Temperature,” presented in the 2005 American Physics Spring Meeting, Los Angeles, USA.

69.   P. W. Li, W. M. Liao, M. T. Kuo, and W. T. Lai, 2005, “Optical and Electronics Characteristics of Germanium Quantum Dots Formed by Selective Oxidation of SiGe/Si-on-Insulator,” presented in the 2005 American Physics Society Spring Meeting, Los Angeles, USA.

70.   P. W. Li W. M. Liao, W. T. Lai, M. T. Kuo and M. –J. Tsai, 2005, “Germanium Quantum-Dots Formed by Selective Oxidation of SiGe and Room-Temperature Ge Single-Electron Transistors,” presented in 2005 US Air Force/Taiwan Nanoscience Initiative Workshop, Hawaii, USA.

71.   S. S. Tseng, P. W. Li, W. M. Liao, and W. T. Lai, “Photoluminesence of Ge nanocrystals formed by oxidation of polycrystalline-Si0.8Ge0.2”, presented in 2005 Electron Devices and Materials Symposia, Kaoshiung, Taiwan.

72.   W. T. Lai, P. W. Li, W. M. Liao, and S. S. Tseng, “Growth mechanism of Ge Quantum Dots Formed by Selective Oxidation of Si1-xGex-on insulator,” presented in 2005 Electron Devices and Materials Symposia, Kaoshiung, Taiwan.

73.   W. M. Liao, C. F. Shih, W. T. Lai, and P. W. Li, “Study of SiGe Dynamic Threshold pMOSFET at Various Temperature,” presented in 2004 International Electron Devices and Materials Symposia, HsinChu, Taiwan.

74.   W. M. Liao, P. W. Li, M. T. Kuo, P. S. Chen, and M. –J. Tsai, “Electrical and Optical properties of Ge Quantum-dots Formed by Selective Oxidation of SiGe-on-Insulator and Room-Temperature Ge Single-Electron Transistors,” presented in the 2nd International SiGe Technology and Device Meeting, Frankfurd, Germany, 2004.

75.   P. W. Li, W. M. Liao, P. S. Chen, S. C. Lu, and M. –J. Tsai, “Fabrication and Characterization of Ge Quantum-dot Transistor Formed by Selective Oxidation of SiGe/Si-on-Insulator,” presented in 2004 Material Research Symposium Spring Meeting.

76.   W. M. Liao, P. W. Li, M. T. Kuo, P. S. Chen, and M. -J. Tsai, “Electrical and Optical Properties of Ge Quantum-Dots Formed by Selective Oxidation of SiGe-on-Insulator and Room-Temperature Ge Single-Electron Transistors”, presented in Symposium on Nano Device Technology 2004.

77.   W. M. Liao, P. W. Li, S. W. Lin and W. C. Tsai, “Fabrication of atomic-scale germanium quantum-dot single-electron transistor,” presented in 2003 Electronics Device and Material Symposium, Keelung, Taiwan.

78.   C. P. Tseng, P. W. Li, and W. M. Liao, “SiGe pMOSFETs for Micropower Applications,” presented in 2003 Electronics Device and Material Symposium, Keelung Taiwan.

79.   S. S. Tzeng, P. W. Li, and W. M. Liao, “Study of NiSi and Ni(Si0.8Ge0.2) formed at low silicidation temperature,” presented in 2003 Electronics Device and Material Symposium, Keelung Taiwan.

80.   S. W. Lin, W. M. Liao, and P. W. Li, “Formation of nano-scale of Ge Quantum Dots by Selecive Oxidation of SiGe on SOI,” presented in 2003 Electronics Device and Material Symposium, Keelung Taiwan.

81.   W. C. Tsai, C. C. Shih, and P. W. Li, “Study of Strained SiGe-channel n- and p-MOSFETs,” presented in 2003 Electronics Device and Material Symposium, Keelung Taiwan.

82.   P. W. Li, W. M. Liao, S. W. Li, P. S. Chen, S. C. Lu, and M. –J. Tsai, “Formation of Ge Quantum Dots by Selective Oxidation of SiGe Alloys for Single-Electron Devices,” presented in 2003 International Conference on Solid State Devices and Materials, Tokyo, Japan

83.   P. W. Li, W. M., Liao, C. C. Shih, T. S. Kuo, L. S. Lai, Y. T. Tseng, and M. –J. Tsai, 2003, “High Performance Si/SiGe Heterostructure MOSFETs for Low power and Low Noise RF/Microwave Circuit Applications,” presented in the 1st International SiGe Technology and Device Meeting, Nagoya, Japan, 2003.

84.   Fu-Li Hsiao, Chii-Chang Chen, Pei-Wen Li, and Jenq-Yang Chang, 2003, “Novel Structure of Variable Optical Attenuator on SOI,” 2003 OPT.

85.   P. W. Li, W. M. Liao, and C. C. Shih, 2002, “SiGe Heterostructure MOSFETs for Micropower Circuits Applications”, presented in 2002 International Electron Devices and Materials Symposia, Taipei.

86.   Y. M. Hsin, H. T. Hsu, K. P. Hseuh, W. B. Tang, P. W. Li, and N. Y. Li, 2002, “Effects of annealing on the performance of InGaP/InGaAsN/GaAs HBTs,” presented in 2002 International Electron Devices and Materials Symposia, Taipei.

87.   Y. C. Chen, C. C. Chen, C. C. Shih, P. W. Li, and J. Y. Chang, “Design and Fabrication of SOI-based AWG,” presented in OPT 2002.

88.   C. C. Shih, P. W.Li, C. C. Chen, and J. Y. Chang, 2002, “Vertical Si Rib Structure Formed by SF6/C4F8–based Plasma for SOI Optical Waveguide Applications”, presented in 2002 International Electron Devices and Materials Symposia, Taipei.

89.   P. W. Li, and W. M. Liao, 2002, “Low-frequency noise analysis of Si/SiGe pMOSFETs for RF circuits”, presented in 2002 International Conference on Solid State Devices and Materials, Nagoya, Japan.

90.   Y. S. Huang, C. J. Lin, N. Y. Li and P. W. Li, 2002, “Photoreflectance and surface photovoltage spectroscopy characterization of an InGaP/InGaAsN/GaAs NpN double-heterojunction bipolar transistor structure”, 2002 Diluted Nitride Workshop, Istanbul, Turkey, Sep. 2002.

91.   P. W. Li and W. M. Liao, 2001, “Design of High Speed Si/SiGe Heterojunction Complementary MOSFETs with Reduced Short-Channel Effects,” presented in Tenth Canadian Semiconductor Technology Conference, Ottawa, Canada, Aug. 14-17.

92.   W. M. Liao and P. W. Li, 2001, “High performance pMOSFETs with Reduced Short Channel Effects using SiGe Source/Drain Heterojunction”, presented in 2001 Electronic Device & Material Symposium.

93.   P. W. Li, H. L. Chen, and S. B. Su, 2001, “SiGe pMOS Devices with Gate Dielectrics Formed by LPCVD TEOS Oxide”, presented in Symposium on Nano Device Technology 2001.

94.   J. S. Liang, Y. S. Huang, C. W. Tien, Y. M. Chang, C. W. Chen, N. Y. Li, P. W. Li, and F. H. Pollak, 2001, “Angle dependent surface photovoltage spectroscopy study of GaAs/GaAlAs vertical cavity surface emitting laser structures,” 43rd 2001 Electronic Materials Conference, University of Notre Dame, Notre Dame, Indiana, USA

95.   P. W. Li, H. R. Chen, and W. M. Liao, 2000, “Analytical Modeling of Si/SiGe Complementary MOS Transistors”, in the Proceeding of 2000 Electronic Device & Material Symposium.

96.   P. W. Li, H. C. Guang, and N. Y. Li, 2000 “Characterization of the Optical Properties of InxGa1-xAs1-yNy by Variable Angle Spectroscopic Ellipsometry”, in the Proceeding of 2000 Electronic Device & Material Symposium.

97.   P. W. Li, N. Y. Li, and H. C. Guang, 1999, “Characterization of the Index of Refraction of GaAs1-xNx by Ellipsometry,” in the Proceeding of 1999 Electronic Device & Material Symposium, p.289-292  

98.   N. Li, C. P. Hains, K. Yang, J. Cheng, P. W. Li, M. Moorthy, X. Weng, R. S. Goldman, 1999, “OMVPE Growth and Characteristics of Almost 1.2 mm GaInNAs-GaAs Three-Quantum-Well Laser Diode”, presented in the 9th International OMVPE Conference.

99.   P. W. Li, 1998, Characterization and Simulation of the Physical Properties of Si1-xGex Oxide, presented in 1998 International conference on Next decades of High Technologies.

100.                     S. W. Chan, L. Zhao, P. W. Li, and E. S. Yang, 1995, High Performance Oxide on SiGe and Their    Interface, in the Proceeding of the 9th International Confernece on Microscopy of Semiconductor Materials, 20-23

101.                     P. W. Li, E. S. Yang, Y. F. Yang, and X. Li, 1994, Eletron Cyclotron Resonance Microwave Plasma Enhanced SiGe Oxidation and MOS Transistors, presented in the 21st International Symposium on Compound Semiconductor,

102.                     P. W. Li, Z. Lu, U. Gennser, E. S. Yang and R. M. Osgood, Jr., 1991, "Oxidation of SiGe by Electron Cyclotron Resonance Plasma," presented in Material Research Society 1991 Fall meeting.

         

C. 專書及專書論文

1. “射頻及高速元件”，王永和、辛欲明、李佩雯、詹益仁、陳武男等合著，2007。

2. “電子材料” ，李佩雯修校/周玉 主審/賈德昌 等編著,滄海書局, 2002。

3. “半導體製程” ，姜廷隆譯,李佩雯校稿,滄海書局, 2001。

           

 

Ｄ. 技術報告及其他

1.     李佩雯與郭明庭, “半導體與量子物理”，科學發展月刊，中華民國九十九年七月。

2.     P. W. Li and M. T. Kuo, “量子資訊之關鍵元件 ¾ 量子點與單電子電晶體”, 電子月刊, 中華民國九十三年十一月。

3.     工程科技通訊,”矽/矽鍺異質結構互補型金氧半電晶體之研製”,第六十七期九十一頁,中華民國九十二年四月。

4.     李佩雯,廖瑛瑞,程蒙召, 1996, 0.35mm 16/64M DRAM Proecss Q1.0 Manual, 世界先進積體電路股份有限公司技術報告。

           


專利：

 

類別

專利名稱

國別

專利號碼

發明人

專利權人

專利期間

發明專利

Method for etching polymer-assisted reduced small contacts for ultra large scale integration semiconductor devices

USA

5,719,089

M. Cherng, P. W. Li

世界先進積體電路股份有限公司

1998/02/17~2018/02

發明專利

Method of Manufacturing a Crown Shape Capacitor

USA

5,932,115

Y. Ho, M. J. Cherng, P. W. Li, H. Cheng, Y. Huang, and S. Wu

世界先進積體電路股份有限公司

08/03/1999~08/02/2019

發明專利

高分子輔助之超大型積體電路之小接觸窗的製造方法

中華

民國

090820

程蒙召,李佩雯

世界先進積體電路股份有限公司

1997/10/21~2016/08

發明專利

蝕刻技術製作電容之方法

中華

民國

082555

何游俊,程蒙召,李佩雯

世界先進積體電路股份有限公司

1996/11/15~1916/3/15