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update 220501

　

High-speed, low RIN, (Quasi-)SM VCSEL for optical interconnect

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The maximum data rate in multi-mode fiber (MMF) based very-short range (VSR) optical interconnect (OI) channels is usually limited by the modulation speed of the transmitter, as in vertical-cavity surface-emitting lasers (VCSELs), rather than by optical power transmission loss or modal dispersion. Prof. Shi has several unprecedented breakthroughs in high-speed VCSELs and holds several records. As compared to high-speed edge-emitting laser, VCSEL usually has a much larger differential resistance (far above 50 W), which would induce more serious device heating and make the impedance-matching between VCSEL and laser-driver becomes more difficult during high-speed operations. In addition, VCSELs with high-power, high-speed, and single-mode (SM) characteristics are highly desired to minimize the modal dispersion and extend the maximum reaching distance of VCSEL based MMF channel. However, in order to attain the highly SM performance in normal VCSEL structure, a small oxide-aperture (< 3 mm) is necessary, which seriously limits its maximum output power and let the aforementioned problems in high resistance become more serious. Compared with the other reported SM structure of VCSELs, such as surface-relief and photonic crystal mirror, the Zn-diffused SM structure is the only technique which not only reduces the differential resistance but also filters out the multi-transverse modes. The small resistance also leads to the enhancement in its maximum SM power. Prof. Shi is one of the pioneers in Zn-diffused SM VCSEL with high-speed performance. Prof. Shi demonstrated Zn-diffused VCSEL with record-high SM power (7.3 mW) at 850 nm wavelength regime. Parasitic RC-limited bandwidth is one of the major bandwidth limiting factor in high-speed VCSEL. Except for the Zn-diffusion technique for low-resistance and single-mode performances as discussed, Prof. Shi firstly demonstrated the oxide-relief structure to greatly reduce the parasitic capacitance in VCSEL. As compared to the other reported techniques for reducing capacitance, such as multi-oxide layers, the oxide-relief technique would not sacrifice the I-V and reliability characteristics of VCESLs for high-speed performance. By combing the Zn-diffusion with oxide-relief structures in VCSEL, he just demonstrates the 940 nm VCSEL with record-high 3-dB E-O bandwidths under room-temperature (40 GHz) and 85℃ (32 GHz) operations among all the reported direct modulation VCSELs, which will be presented in OFC 2019. He also cooperated with VIS company (http://v-i-systems.com/). By using oxide-relief/Zn-diffusion techniques, they demonstrated VCSEL for 25 Gbit/sec transmission at a record-high temperature as 150 ℃.


Figure 1 (a) shows the conceptual cross-sectional view of Zn-diffusion/oxide-relief VCSEL (b) top-view of demonstrated VCSEL (c) Measured E-O response of VCSEL with record-wide E-O bandwidth.


Figure 2.Transmission results of demonstrated ultrafast VCSEL (a) 50 Gbit/sec eye patterns measured at 25℃ and b2b transmission; (b) 50 Gbit/sec eye patterns measured at 85℃and b2b transmission; (c) 50 Gbit/sec eye patterns measured at 25℃ and 100 meter OM5 fiber transmission; (d) 50 Gbit/sec eye patterns measured at 85℃ and 100 meter OM5 fiber transmission with FFE equalization; (e) corresponding bathtub curves.


Related papers：

1. J.-W. Shi, C.-C. Chen, Y.-S. Wu, S.-H. Guol, and Ying-Jay Yang, “High-Power and High-Speed Zn-Diffusion Single Fundamental-Mode Vertical-Cavity Surface-Emitting Lasers at 850nm Wavelength,” IEEE Photon. Technol. Lett., vol. 20, pp.1121-1123, July, 2008.

2. J.-W. Shi, C.-C. Chen, Y.-S. Wu, S.-H. Guol, and Ying-Jay Yang, “The Influence of Zn-Diffusion Depth on the Static and Dynamic Behaviors of Zn-Diffusion High-Speed Vertical-Cavity Surface-Emitting Lasers at a 850nm Wavelength,” IEEE J. Quantum, Electron., vol. 45, pp. 800-806, July, 2009.

3. J.-W. Shi, W.-C. Weng, F.-M. Kuo, Ying-Jay Yang, S. Pinches, M. Geen, A. Joel, “High-Performance Zn-Diffusion 850-nm Vertical-Cavity Surface-Emitting Lasers With Strained InAlGaAs Multiple Quantum Wells,” IEEE Photonics Journal, vol. 2, no. 6, pp. 960-966, Dec., 2010.

4. Jin-Wei Shi, Zhi-Rui Wei, Kai-Lun Chi, Jia-Wei Jiang, Jhih-Min Wun, I-Cheng Lu, Jason (Jyehong) Chen, and Ying-Jay Yang, “Single-Mode, High-Speed, and High-Power Vertical-Cavity Surface-Emitting Lasers at 850 nm for Short to Medium Reach (2 km) Optical Interconnects,” IEEE/OSA Journal of Lightwave Technology, vol. 31, pp. 4037-4044, Dec., 2013.

5. Jin-Wei Shi, Jhih-Cheng Yan, Jhih-Min Wun, Jason (Jyehong) Chen, Ying-Jay Yang, “Oxide-Relief and Zn-Diffusion 850 nm Vertical-Cavity Surface-Emitting Lasers with Extremely Low Energy-to-Data-Rate Ratios for 40 Gbit/sec Operations” IEEE J. of Sel. Topics in Quantum Electronics, vol. 19, pp. 7900208, March/April, 2013.

6. Jia-Liang Yen, Kai-Lun Chi, Jia-Wei Jiang, Ying-Jay Yang, and Jin-Wei Shi, “Single-Mode Vertical-Cavity Surface-Emitting Lasers Array with Zn-Diffusion Aperture for High-Power, Single-Spot, and Narrow Divergence Angle Performance,”IEEE J. of Quantum Electronics, vol. 50, pp. 787-794, Oct., 2014.

7. Kai-Lun Chi, Jia-Liang Yen, Jhih-Min Wun, Jia-Wei Jiang, I-Cheng Lu, Jason (Jyehong) Chen , Ying-Jay Yang, and Jin-Wei Shi, “Strong Wavelength Detuning of 850 nm Vertical-Cavity Surface-Emitting Lasers for High-Speed (>40 Gbit/sec) and Low-Energy Consumption Operation,” IEEE J. of Sel. Topics in Quantum Electronics, vol. 21, no. 6, pp. 1701510, Nov.,/Dec., 2015.

8. I-Cheng Lu, C.-C. Wei*, H.-Yu Chen, K.-Z. Chen, C.-H. Huang, K.-L. Chi, J.-W. Shi, F.-I. Lai, D.-H. Hsieh, H.-C. Kuo, Wei Lin, S.-W. Chiu, and J. (Jason) Chen, “Very High Bit-Rate Distance Product Using High-Power Single-Mode 850 nm VCSEL with Discrete Multi-Tone Modulation Formats Through OM4 Multi-Mode Fiber,” IEEE J. of Sel. Topics in Quantum Electronics, vol. 21, no. 6, pp. 1701009, Nov.,/Dec., 2015.

9. Kai-Lun Chi, Yi-Xuan Shi, Xin-Nan Chen, Jason (Jyehong) Chen, Ying-Jay Yang, J.-R Kropp, N. Ledentsov Jr., M. Agustin, N.N. Ledentsov, G. Stepniak, J. P. Turkiewicz, and Jin-Wei Shi, “Single-Mode 850 nm VCSELs for 54 Gbit/sec On-Off Keying Transmission Over 1 km Multi-Mode Fiber,” IEEE Photon. Technol. Lett., vol. 28, no. 12, pp. 1367-1370, June, 2016.

10. Jin-Wei Shi, Chia-Chien Wei, Jason (Jyehong) Chen, N.N. Ledentsov, and Ying-Jay Yang, “Single-Mode 850 nm Vertical-Cavity Surface-Emitting Lasers with Zn-diffusion and Oxide-relief Apertures for > 50 Gbit/sec OOK and 4-PAM Transmission,” Proc. SPIE, Vertical-Cavity Surface Emitting Lasers XXI, vol. 10122, pp. 101220F, Feb., 2017. (Invited Paper)

11. N. Ledentsov Jr., M. Agustin , J.-R.Kropp, V. A. Shchukin, V. P. Kalosha, K. L. Chi, Z. Khan, J.-W. Shi, N.N.Ledentsov “Temperature stable oxide-confined 850 nm VCSELs operating at bit rates up to 25 Gbit/s at 150°C,” Proc. SPIE, Vertical-Cavity Surface Emitting Lasers XXII, pp. 10552-24, Feb., 2018.

12. M. Agustin, N. Ledentsov Jr., J.-R. Kropp, V.A. Shchukin, V. P. Kalosha, K. L. Chi, J.-W. Shi, N. N. Ledentsov, “50 Gb/s NRZ data transmission over OM5 fiber in the SWDM wavelength range,” Proc. SPIE, Vertical-Cavity Surface Emitting Lasers XXII, pp. 10552-1, Feb., 2018.

13. Zuhaib Khan, Jia-Liang Yen, Chen-Lung Cheng, Kai-Lun Chi, and Jin-Wei Shi, “Enhancing the Static and Dynamic Performance of High-Speed VCSELs by Zn-Diffused Shallow Surface Relief Apertures,” IEEE J. of Quantum Electronics, vol. 54, pp. 2400706, Oct., 2018.

14. N. Ledentsov Jr., M. Agustin, V.A. Shchukin, J.-R. Kropp, N.N. Ledentsov, ?. Chorchos, J.P. Turkiewicz, Z. Khan, C.-L. Cheng, J.-W. Shi, N. Cherkashin, “Quantum dot 850 nm VCSELs with extreme high temperature stability operating at bit rates up to 25 Gbit/s at 150 °C,” Solid State Electronics, vol. 155, pp. 150-158, March, 2019. (SCI)

15. Chen-Lung Cheng, N. Ledentsov Jr., Zuhaib Khan, Jia-Liang Yen, N. N. Ledentsov, and Jin-Wei Shi, “Ultrafast Zn-Diffusion and Oxide-Relief 940 nm Vertical-Cavity Surface-Emitting Lasers under High-Temperature Operation,” IEEE J. of Sel. Topics in Quantum Electronics, vol. 25, pp. 1700507, Nov./Dec., 2019.

16. Z. Khan et al., "Single-Mode 940 nm VCSELs with Narrow Divergence Angles and High-Power Performances for Fiber and Free-Space Optical Communications," in IEEE Access, vol. 8, pp. 72095-72101, 2020.

17. Po-Chou Pan, Dhiman Nag, Zuhaib Khan, Ching-Jung Chen, Jin-Wei Shi, Apurba Laha, and Ray-Hua Horng, "Effect of Thermal Management on the Performance of VCSELs," IEEE Transactions on Electron Devices, vol. 67, no. 9, pp. 3736-3739, Sept. 2020.

18. Yen-Yu Huang, Yung-Hao Chang, Yaung-Cheng Zhao, Zuhaib Khan, Zohauddin Ahmad, Chia-Hung Lee, Jui-Sheng Chang, Cheng-Yi Liu, and Jin-Wei Shi, “Low-Noise, Single-Polarized, and High-Speed Vertical-Cavity Surface-Emitting Lasers for Very Short Reach Data Communication,” IEEE/OSA Journal of Lightwave Technology, doi: 10.1109/JLT.2022.3151905.